首页> 外文会议>Symposium on Thin-Films - Stresses and Mechanical properties Vii, held December 1-5, 1997, Boston, Massachusetts, U.S.A. >Effects of interface nonplanarity on the interface fracture energy of the TiN/SiO_2 system
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Effects of interface nonplanarity on the interface fracture energy of the TiN/SiO_2 system

机译:界面非平面性对TiN / SiO_2体系界面断裂能的影响

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Fracture mechanics models indicate that nonplanarity of the interface should have a significant effect on the measured fracture energy [1-5]. Previous work on a typical interconnect structure (Fig 1) has demonstrated that two thin film systems with nominally the same composition, but processed under different conditions exhibited different SiO_2/TiN interface fracture energies [6,7]. Upon investigation via cross-sectional TEM, it was found that the stronger interface was significantly rougher than the weaker interface. These results indicate that small changes in processing conditions can significantly effect both interface morphology and adhesion. Accordingly, in this study, samples differing in the flow rate of Ar to a plasma arc during deposition of a TiN layer were chosen in order to investigate the effects on the interface morphology and the resulting interface fracture energy.
机译:断裂力学模型表明,界面的非平面性应该对测得的断裂能有重要影响[1-5]。先前对典型互连结构的研究(图1)表明,名义上具有相同成分但在不同条件下处理的两个薄膜系统表现出不同的SiO_2 / TiN界面断裂能[6,7]。通过横截面TEM进行研究后发现,较强的界面明显比较弱的界面粗糙。这些结果表明,加工条件的微小变化会显着影响界面形态和附着力。因此,在这项研究中,为了研究对界面形态和所产生的界面断裂能的影响,选择了在TiN层沉积过程中Ar向等离子弧的流量不同的样品。

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