首页> 外文会议>Symposium on Surface Engineering 2001―Fundamentals and Applications, Nov 26-29, 2001, Boston, Massachusetts, U.S.A. >Speetroscopic Ellipsometry as a Potential In-Line Optical Metrology Tool For Relative Porosity Measurements of Low- K Dielectric Films
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Speetroscopic Ellipsometry as a Potential In-Line Optical Metrology Tool For Relative Porosity Measurements of Low- K Dielectric Films

机译:鞘镜椭偏仪作为潜在的在线光学计量学工具,用于低K介电膜的相对孔隙率测量

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摘要

The optical properties of organosilicate glass (OSG) samples were investigated with spectroscopic ellipsometry. We found that samples with dramatically higher hardness had higher indices of refraction (RI) and thus higher electron densities and lower relative porosities than films with lower hardnesses. The reverse was true for films with low hardnesses. As well, these films did not have the same optical properties as porous SiO_2 across the spectral range measured, which we show has significant implications for the in-line optical metrology of these materials.
机译:用光谱椭偏仪研究了有机硅玻璃(OSG)样品的光学性能。我们发现,硬度高得多的样品比硬度低的膜具有更高的折射率(RI),因此具有更高的电子密度和更低的相对孔隙率。对于低硬度的薄膜则相反。同样,这些膜在所测量的光谱范围内不具有与多孔SiO_2相同的光学性能,这表明这些材料对这些材料的在线光学计量具有重要意义。

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