Titanium Nitride (TiN_x) thin films were deposited on Si(100) by reactive magnetron sputtering. The varied deposition conditions were the substrate temperature (T_d) (27 - 650 deg C) and the negative bias voltage (V_b) applied to the substrate (0 - 200 V) in order to produce TiN_x films with various composition and structural characteristics. The deposition process was monitored in-situ by Spectroscopic Elipsometry in the spectral range 1.5-5.5 eV. Determination of the film composition was made through the measured screened plasma energy omega _(ps) while the electrical resistivity of TiN_x was studied in terms of the unscreened plasma energy omega _(pu). omega _(pu) was calculated by an optical model including a Drude term and Lorentz oscillator terms and their dependence on T_d and V_b was studied. The omega _(pu) was found to increase with V_b until a saturation value was obtained. The saturation value of omega _(pu) depends on the T_d. omega _(pu) describes better the TiN_x films, since it is directly correlated with their metalic character in terms of the electrical resistivity.
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