Current Understanding and Modeling of Boron―Interstitial Clusters

摘要

Scaling of devices requires not only shallow junctions but also high levels of dopant activation. For boron as the main p―type dopant, the latter requirement is especially problematic since small clusters of boron atoms and self―interstitials, known also as boron―interstitial clusters (BICs), were found to deactivate and immobilize large fractions of the implanted atoms during post―implantation annealing. In this article, the properties of BICs are reviewed and their influence on semiconductor processes are highlighted.