Scaling of the devices requires not only shallow junctions but also high levels of dopant activation.For boron as the main p-type dopant,the latter requirement is especially problematic since small clusters of boron atoms and self-interstitials,known also as boron-interstitial clusters (BICs),were found to deactivate and immobilize large fractions of the implanted atoms during post-implantation annealing.In this article,the properties of BICs are reviewed and their influence on semiconductor processes are highlighted.
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