Antimony and Boron Diffusion in Silicon and Silicon Germanium under the Influence of Point Defects Injection by Rapid Thermal Anneal

摘要

The effect of point defect injection on the diffusion of antimony and boron in silicon and silicon-germanium alloys has been studied by comparison of inert with injection diffusions. In this work, Sb and B in Si were used as control wafers to investigate Sb and B diffusion behavior in Si_(0.9)Ge_(0.1). The point defect injection technique was carried out by rapid thermal annealing (RTA) Sb and B in Si and Si_(0.9)Ge_(0.1) samples with the various surface coatings in either oxygen or ammonia atmospheres to inject either interstitial or vacancy defects. The diffusion profiles for as-grown and RTA annealed samples were measured by Secondary Ion Mass Spectrometry (SIMS). Diffusivities for B in Si and Si_(0.9)Ge_(0.1) were obtained using computer simulations of the measured boron profiles for their annealed samples. Sb diffusion in Si and Si_(0.9)Ge_(0.1) was found enhanced by vacancy injection and retarded by interstitial injection. The enhanced B diffusion in Si and Si_(0.9)Ge_(0.1) was found by interstitial injection. These results confirm that Sb diffusion in Si_(0.9)Ge_(0.1) is primarily dominated by vacancy-mediated mechanism, while B diffuses in Si_(0.9)Ge_(0.1) by an interstitially mediated mechanism. The effect of the RTA diffusion time on the B diffusion in Si and Si_(0.9)Ge_(0.1) has also been investigated. The diffusivity versus diffusion time of B in Si and Si_(0.9)Ge_(0.1) for inert and injection samples is presented. It was found that the shorter annealing time had the faster diffusion. This suggested that it caused by transient diffusion effect arising from point defects.