Characterization of Damage Induced by Cluster Ion Implantation

摘要

Molecular dynamics simulations of boron monomer and small clusters (B_4 and B_(10)) impacting on Si(001) were performed in order to investigate the damage formation by monomer/cluster impact. These monomer and clusters show similar implant depth and efficiency, but different damage structures. At the impact of B monomer with 230eV of incident energy, some point-defects such as vacancy-interstitial pairs are mainly formed. On the other hand B_(10) produces several times larger number of vacancies and interstitials compared with B_1, This damage structure is different from one by B_1 implantation and due to high yield amorphization of implanted region. This characteristic damage formation process is expected to cause different annihilation process.