首页>
外国专利>
Implant-induced damage control in ion implantation
Implant-induced damage control in ion implantation
展开▼
机译:离子注入中植入物引起的损伤控制
展开▼
页面导航
摘要
著录项
相似文献
摘要
An ion implantation system is provided having an ion implantation apparatus configured to provide a spot ion beam having a beam density to a workpiece, wherein the workpiece has a crystalline structure associated therewith. A scanning system iteratively scans one or more of the spot ion beam and workpiece with respect to one another along one or more axes. A controller is also provided and configured to establish a predetermined localized temperature of the workpiece as a predetermined location on the workpiece is exposed to the spot ion beam. A predetermined localized disorder of the crystalline structure of the workpiece is thereby achieved at the predetermined location, wherein the controller is configured to control one or more of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature of the workpiece at the predetermined location on the workpiece.
展开▼