Characterization of Damage Induced by Cluster Ion Implantation

摘要

Molecular dynamics simulations of boron monomer and small clusters (B_4 and B_10) impacting on Si(001) were performed in order to investigate the damage formation by monomer/cluster impact.These monomer and clusters show similar implant depth and efficiency,but different damage structures.At the impact of B monomer with 230eV of incident energy,some point-defects such as vacancy-interstitial pairs are mainly formed.On the other hand B_10 produces several times larger number of vacancies and interstitials compared with B_1,This damage structure is different from one by B_1 implantation and due to high yield amorphization of implanted region.This characteristic damage formation process is expected to cause different annihilation process.