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Charge transfer modeling for charge-coupled devices

机译:电荷耦合器件的电荷转移建模

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摘要

The three-dimensional Poisson's equation is solved by iterative methods and the resulting electric field is used in Newton's equation to simulate electron transfer in a charge-coupled deivce (CCD). The time dependence of charge transfer is studied through a random walk simulation of Newton's equation. Potential obstacles of the order of 0.03 V are seen to slow charge transfer. Electron motion is also followed in two spatial dimensions through Newton's equation in order to probe a more varied set of potential obstacles.
机译:通过迭代方法求解三维泊松方程,并将所得电场用于牛顿方程中,以模拟电荷耦合器件(CCD)中的电子传输。通过牛顿方程的随机游走模拟研究了电荷转移的时间依赖性。可以看到约0.03 V的潜在障碍会减慢电​​荷转移。电子运动还通过牛顿方程在两个空间维度上跟随,以便探测更多种潜在的障碍。

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