Nonequilibrium Charge Carrier Generation - Recombination Mechanisms in CdMnTe Thin Films

摘要

The absorption, photoconductivity and photoluminescence spectra of Cd_(0.5)Mn_(0.5)Te thin films, deposited by "flash" evaporation and vapor phase deposition have been analyzed. The energy gap and the energetic position of the recombination levels in CdMnTe thin films for different substrate temperatures have been determined. The investigation results have been compared with the same parameters for CdMnTe single crystals used as evaporation material.