Growth of Large Diameter Semi-Insulating 6H-SiC Crystals by Physical Vapor Transport

摘要

Semi-insulating (SI) 6H-SiC boules up to 110mm in diameter have been grown by Physical Vapor Transport (PVT). SI properties have been achieved by vanadium compensation, which resulted in the room temperature electrical resistivity exceeding 2x10~(11) Ω·cm. Low temperature photoluminescence (LTPL) data shows the presence of the deep intrinsic defect level UD-1 in addition to V~(4+). The nitrogen-bound exciton (NBE) luminescence is weak in heavily vanadium compensated 6H-SiC.