The interaction of C_(60) with Si(111) and Co/Si(111)

摘要

We have studied the interaction of C_(60) with clean Si(111) and sub-monolayer Co covered Si(111) using scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Our STM results indicate that C_(60) has little mobility at room temperature (RT) on Co/Si(111). After annealing to 450℃, STM images show a regular arrangement of partially decomposed C_(60). XPS reveals a partial decomposition of C_(60) on Co/Si(111) at 520℃, and total decomposition to form a SiC-3x3 phase at 720℃. These results show that Co catalyses C_(60) decomposition resulting in the formation of the ordered SiC-3x3 phase ～200℃ below that on clean Si(111).