首页> 外文会议>Symposium on Optical Microstructural Characterization of Semiconductors held November 29-30, 1999, Boston, Massachusetts, U.S.A. >Mesoscopic characterization of the optical prperty of antiphase boundaries in CuPt-ordered GaInP_2
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Mesoscopic characterization of the optical prperty of antiphase boundaries in CuPt-ordered GaInP_2

机译:CuP有序GaInP_2中反相边界的光学性质的介观表征

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We have developed an apparatus for polarized cathodoluminescence (CL) spectroscopy combined with transmission electron microscopy (TEM), that enables us to obtain simultaneously structural data in higher spatial resolution by TEM and polarized luminescence s pectra by CL of the same microscopic area. The polarized-CL/TEM method is very useful to study the optical properties of low-dimensional microstructures in semiconducting materials. We have applied the method to examine the optical property of antiphase boundaries in CuPt-ordered GaInP_2 and found, for the first time, the polarized light emission from the APBs whose habit planes are parallel to the (111) and (110)atomic planes.
机译:我们开发了一种结合透射电子显微镜(TEM)的偏光阴极荧光(CL)光谱仪,使我们能够通过TEM同时获得具有较高空间分辨率的结构数据,而通过相同显微镜区域的CL偏光发光光谱仪能够同时获得该数据。极化CL / TEM方法对于研究半导体材料中低维微观结构的光学性质非常有用。我们已经应用该方法检查了CuPt有序的GaInP_2中反相边界的光学性质,并首次发现了习惯平面平行于(111)和(110)原子平面的APB发出的偏振光。

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