Method for Measuring Profiles of Photoacid Patterns in Chemically Amplified Resists

机译：化学增强抗蚀剂中光酸图案轮廓的测量方法

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摘要

We describe a method based on single molecule probing of acid concentration to measure the profiles of photogenerated acid patterns in chemically amplified resist films. We further present preliminary data which demonstrates the viability of this method.

机译：我们描述了一种基于单分子探测酸浓度的方法，以测量化学放大的抗蚀剂膜中光生酸图案的轮廓。我们进一步提供了初步数据，证明了该方法的可行性。

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《Symposium on Nonlithographic and Lithographic Methods of Nanofabrication-From Ultralarge-Scale Integration to Photonics to Molecular Electronics Nov 26-Dec 1, 2000, Boston, Massachusetts, U.S.A.》|2000年|p.6.7.1-6.7.6|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
Gilbert D. Feke; Robert D. Grober; Gerd Pohlers; James F. Cameron;
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Department of Applied Physics, Yale University, New Haven, CT 06520-8284, U.S.A.;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Method for Measuring Profiles of Photoacid Patterns in Chemically Amplified Resists

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