Improved Model to Determine the Generation Lifetime in Double Gate SOI nMOSFETs

摘要

This work reports on an improved model to determine the hole generation lifetime in Double Gate SOI nMOSFETs. This improved model is based on the drain current switch-off transient for partially depleted SOI devices and it is dependent on the silicon thickness. This model also considers the influence of the halo implanted region and the channel length reduction. The obtained results through this new technique with double gate devices were compared with experimental measurements and two-dimensional numerical simulations of the single gate devices showing a good agreement.