Porous silicon obtained by the anodization of heavily doped n~+ -type silicon wafers was used as a sacrificial layer to micromachine silicon platforms. The effect of experimental parameters, ssuch as the nature of the masking layer, current density and anodization time, on the geometry of the porous Si formed in patterned substrate is shown. Advantages of this mehtod on the orientation-dependent chemical etching (ODCE), which is classically used for optical fiber alignment,are discussed.
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