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Dislocations in a Partially-Filled Skutterudite

机译:部分填充的方钴矿中的位错

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摘要

The partially filled skutterudite structure is a candidate thermoelectric material with the capacity for phonon scattering by the decoupled rattling of filling ions. In this transmission electron microscopy investigation of a 1.6%Ce, 1.6%Ni, 4.9%Ge, 22.8%Co, and 69.1%Sb alloy, the structure is confirmed to be of a partially-filled skutterudite, but with a number of defects. Isolated dislocation dipoles, arrays of dislocation dipoles, and a subgrain boundary are observed and characterized. An atomic structure of a dislocation dipole is also proposed, and the effect of such dislocations on thermoelectric properties is discussed.
机译:部分填充的方钴矿结构是一种候选的热电材料,具有填充离子解耦发出的嘎嘎声声子散射的能力。在这种对1.6%Ce,1.6%Ni,4.9%Ge,22.8%Co和69.1%Sb合金的透射电子显微镜研究中,该结构被证实为部分填充的方钴矿,但存在许多缺陷。观察并表征了孤立的位错偶极子,位错偶极子阵列和亚晶粒边界。还提出了位错偶极的原子结构,并讨论了这种位错对热电性质的影响。

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