Study of the growth mechanism and properties of InN films grown by MOCVD

摘要

Thin films of InN were grown on (0001) Sapphire by MOCVD. The effect of growth conditions and buffer layer on the film morphology was studied. Growth temperature and TMI flow rate were important factors in the growth of InN. The use of a low temperature AlN buffer layer was also found to improve the morphology and crystal quality of the films. Thin (<40A) AlN buffer layers produced the best results while polycrystalline InN was obtained when the buffer layer thickness exceeded 60A. Delamination of the InN films was observed to occur at growth temperature, which limited the thickness of the films to less than 300 nm. A room temperature mobility of 792 cm~2/Vs and an electron concentration of 2.1x10~(19) cm~(-3) were measured in an approximately 200 nm thick InN layer grown on sapphire.