Heteroepitaxial growth of In_2O_3 on YSZ(100) single crystal surface

摘要

In_2O_3 films were deposited on YSZ (001) single crystal surface at 800 deg C at an oxygen pressure of 14 Pa by pulsed laser deposition (PLD) method. A heteroepitaxial relationship between the film and the substrate was seen in TEM photographs and X-ray diffraction measurements. The omega locking curve full width of half maximum (FWHM) of the In_2O_3 (004) x-ray diffraction was 0.06 deg. Film conductivities were approx 10 S/cm or less, while carriers on the order of 10~(18)cm~3 were generated.