A novel four terminal poly-Si TFT suppressing kink and improving reliability

摘要

We fabricated a new device, which employs counter-doped lateral body terminal (CLBT) in order to suppress kink effects and improve the device stability. Proposed device also employs a buried channel (BC), which increases ON-current and operating frequency. Although LDD structure is not employed in the proposed device, low OFF-current is successfully obtained due to elimination of minority carrier through CLBY. We have measured the dynamic properties of poly-Si TFT device and circuit. The reliability of TFT and circuits after AC stress is also discussed in our paper.