The growth of homo-epitaxial silicon at low temperatures using hot wire chemical vapor deposition

摘要

We report on the first known growth of high-quality epitaxial Si via the hot wire chemical vapor deposition (HWCVD) method. This method yields epitaxial Si at the comparatively ow temperatures of 195 deg to 450 deg C, and relatively high growth rates of 3 to 20 A/sec. Layers up to 4500-A thick have been grown. These epitaxial layers have been characterized by transmission electron microscopy (TEM), indicating large regions of nearly perfect atomic registration. Electron channeling patterns ( ECPs) generated on a scanning electron microscope (SEM) have been used to characterize, as well as optimize the growth process. Electron beam induced current (EBIC) characterization has also been performed, indicating defect densities as low as 8x10~4/cm~2. Secondary ion beam mass spectrometry (SIMS) data show that these layers have reasonable impurity levels within the constraints of our current deposition system. Both n and --type layers were grown, and p diodes have been fabricated.