Improving GaAs Chip yield And Enhancing Reliability of GaAs Devices

摘要

The purpose of this research is to improve GaAs yield and enhance the reliability of GaAs MMICs (Monolithic Microwave Integrated Circuits) by first understanding the physical mechanisms of GaAs, Ni,Au-Ge eutectic and Au alloying process. Ohmic ooze has been driving force for this research. Variety of innovative experiments has been designed, so that contact resistance may be guaranteed to be within the permissible range. This resulted into the development of analytical techniques to measure contact resistance to GaAs as a result of alloying process employing Ni,Au-Ge and Au.