首页> 外文会议>Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Symposium G on Atomic Scale Characterization and Simulation of Materials and Process of the 1995 E-Mrs Spring Conference May 22-26, 1995 Strasbourg, France >Oxygen precipitate precursors and size thresholds for the preferential nucleation for copper and nickel precipitation in silicon: the detection of copper and nickel contamination by minority carrier lifetime methods
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Oxygen precipitate precursors and size thresholds for the preferential nucleation for copper and nickel precipitation in silicon: the detection of copper and nickel contamination by minority carrier lifetime methods

机译:氧沉淀前体和硅中铜和镍沉淀优先成核的尺寸阈值:通过少数载流子寿命方法检测铜和镍污染

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摘要

The precipitation of Cu and Ni at very small oxygen clusters has been investigated by an Elymat-based photocurrent technique. The technique has been demonstrated to be capable of revealing the point at which the precipitation at oxygen cluster sites becomes predominant over surface precipitation, even for very small amounts of metal contaminants. This corresponds to the threshold for effective gettering. Conversely the technique may also be useful as a simple and convenient method for detecting small amounts of Cu or Ni contamination by electrial means.
机译:已经通过基于Elymat的光电流技术研究了在非常小的氧簇上的Cu和Ni的沉淀。事实证明,该技术即使在极少量的金属污染物下,也能揭示出氧簇位置处的沉淀相对于表面沉淀起主导作用的点。这对应于有效吸气的阈值。相反,该技术也可以用作通过电子手段检测少量Cu或Ni污染的简便方法。

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