首页> 外文会议>Symposium N on carbon, hydrogen, nitrogen and oxygen in silicon and other elemental semiconductors >Oxygen precipitate precursors and size thresholds for the preferential nucleation for copper and nickel precipitation in silicon: the detection of copper and nickel contamination by minority carrier lifetime methods
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Oxygen precipitate precursors and size thresholds for the preferential nucleation for copper and nickel precipitation in silicon: the detection of copper and nickel contamination by minority carrier lifetime methods

机译:氧化铜和镍沉淀优先成核的氧气沉淀前体和尺寸阈值:少数载体寿命方法检测铜和镍污染

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摘要

The precipitation of Cu and Ni at very small oxygen clusters has been investigated by an Elymat-based photocurrent technique. The technique has been demonstrated to be capable of revealing the point at which the precipitation at oxygen cluster sites becomes predominant over surface precipitation, even for very small amounts of metal contaminants. This corresponds to the threshold for effective gettering. Conversely the technique may also be useful as a simple and convenient method for detecting small amounts of Cu or Ni contamination by electrial means.
机译:通过基于Elymat基光电流技术研究了在非常小的氧簇处的Cu和Ni的沉淀。已经证明了该技术能够揭示氧簇位点沉淀的点在表面沉淀上的主要沉淀,即使对于非常少量的金属污染物也是如此。这对应于有效吸收的阈值。相反,该技术也可用作通过电动装置检测少量Cu或Ni污染的简单且方便的方法。

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