Microcrystalline Silicon Thin Film Growth by Electron Cyclotron Resonance Chemical Vapour Deposition at 80℃ for Plastic Application

摘要

Microcrystalline silicon deposited at low temperatures (<150℃) is a candidate material for use as the channel layer in thin film transistors deposited on plastic substrates. This would enable driver electronics to be integrated onto cheap flexible AMLCD panel. In this study microcrystalline silicon was deposited by Electron Cyclotron Resonance Plasma Enhanced chemical Vapour Deposition (ECR-PECVD) at a temperature of 80℃, compatible with most plastic such as PET and PEN. A source gas mixture of SiH_4 and H_2 was employed. The structural and optical properties of samples deposited under a range of deposition conditions were measured.