Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.;
Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.;
rnInstitute of Nanoscience, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.;
rnDepartment of Physics, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.;
rnInstitute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.;
rnInstitute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C. Institute of Nanoscience, National Chung Hsing University, Taichung 402, Taiwan, R.O.C. Department of Physics, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.;
机译:使用二乙基锌和一氧化二氮在低温下通过原子层沉积在(0 0 0 1)蓝宝石衬底上自限生长ZnO膜
机译:使用新型基于吡咯的前驱体对氧化钡和钛酸钡薄膜进行自限原子层沉积
机译:氧化铝原子层沉积期间远程氧等离子体自限氧吸附的第一原理研究
机译:用氧化氮作为氧气供给的ZnO膜原子层沉积自限制的自限制
机译:各种氧化物薄膜原子层沉积和热原子层蚀刻工艺的机械研究
机译:次饱和等离子体增强原子层沉积法将锌酮样转变为多孔ZnO薄膜
机译:使用过氧化氢原子层沉积制备的ZnO薄膜中的有效氧缺陷钝化