Effect of the silver mirror location on the luminance intensity of double roughened GaN light-emitting diodes

机译：银镜位置对双粗糙GaN发光二极管亮度强度的影响

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A new scheme structure of ITO/Ni/Ag/Ni mirror was presented to get high reflectance after annealing. At 470nm, the reflectance was as high as 90% after annealing at 270℃ for 1 hour.

机译：提出了一种新的ITO / Ni / Ag / Ni镜面结构，以提高退火后的反射率。在470nm下，在270℃下退火1小时，反射率高达90％。

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来源
《State-of-the-Art Program on Compound Semiconductors 49(SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9》|2008年|97-101|共5页
会议地点 Honolulu HI(US);Honolulu HI(US);Honolulu HI(US);Honolulu HI(US)
作者
Ping-Wei Huang; YewChung Sermon Wu;
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Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China;

Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China;

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正文语种 eng
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专利

1. Effect of the Silver Mirror Location on the Luminance Intensity of Double-Roughened GaN Light-Emitting Diodes [J] . YewChung Sermon Wu, Cheng Liao, Wei Chih Peng Electrochemical and solid-state letters . 2007,第10期

机译：银镜位置对双粗糙GaN发光二极管发光强度的影响
2. Improved luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface [J] . Wei Chih Peng, Yew Chung Sermon Wu Applied Physics Letters . 2006,第4期

机译：通过粗糙化p-GaN表面和未掺杂GaN表面，提高InGaN-GaN发光二极管的亮度强度
3. Improvement in light output intensity of InGaN/GaN multiple-quantum-well blue light-emitting diode by SiO_2/Si_3N_4 distributed Bragg reflectors and silver back mirror [J] . Po-Hsun Lei Thin Solid Films . 2011,第10期

机译：SiO_2 / Si_3N_4分布式布拉格反射器和银后视镜提高InGaN / GaN多量子阱蓝色发光二极管的光输出强度
4. Effect of the silver mirror location on the luminance intensity of double roughened GaN light-emitting diodes [C] . Ping-Wei Huang, YewChung Sermon Wu State-of-the-Art Program on Compound Semiconductor Symposium . 2008

机译：银镜子位置对双粗糙的GaN发光二极管亮度强度的影响
5. Sunlight readability and luminance characteristics of light-emitting diode push button switches. [D] . Fitch, Robert J. 2004

机译：发光二极管按钮开关在阳光下的可读性和亮度特性。
6. Enhancement of Light Extraction Efficiency for InGaN/GaN Light-Emitting Diodes Using Silver Nanoparticle Embedded ZnO Thin Films [O] . Po-Hsun Lei, Chyi-Da Yang, Po-Chun Huang, 2019

机译：使用银纳米颗粒嵌入的ZnO薄膜增强InGaN / GaN发光二极管的光提取效率
7. Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods [O] . An Tielei, Sun Bo, Wei Tongbo, 2013

机译：使用两步粗糙化方法增强独立式GaN基倒装芯片发光二极管的光提取

Effect of the silver mirror location on the luminance intensity of double roughened GaN light-emitting diodes

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