photoelectrochemical surface roughening of the p-side upper GaN-based light-emitting diode

摘要

A method for photoelectrochemical p-type gallium nitride heterostructure (GaN) layer (PEC) etching, using the internal bias in the semiconductor structure, electrons from reaching the surface of the p-type layer and a step that facilitates preventing holes from reaching the surface of the p-type layer, a p-type layer, an active layer for absorbing PEC irradiation, the semiconductor structure, and an n-type layer. The present invention can comprise at the rough surface of the p-type layer, discloses an LED, is scattered to the external medium in the light incident on the roughened surface, light, rough surface, the light emitting active layer of the LED incident. For example, in order to extract the light emitted by the LED, has a surface that is roughened, and a p-type III-nitride layer, an n-type III-nitride layer, LED is, p-type III-nitride and may include an active layer for emitting light between the n-type Group III nitride layer and the layer.