机译:具有三倍粗糙表面的GaN基倒装芯片发光二极管的功率增强
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan 300, R.O.C.;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan 300, R.O.C.;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan 300, R.O.C.;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan 300, R.O.C.;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan 300, R.O.C.;
机译:具有双粗糙表面的GaN基发光二极管的功率增强
机译:使用两步粗糙化方法增强独立式GaN基倒装芯片发光二极管的光提取
机译:通过单层纳米球产生的锥形结构增强GaN基倒装芯片发光二极管的输出功率
机译:通过使用激光烧蚀和化学蚀刻进行表面纹理化,增强了GaN基薄膜倒装芯片发光二极管的光输出
机译:GaN基发光二极管上的光学功能结构,用于提高光提取效率和控制发射模式。
机译:通过在p-GaN表面图案化光子准晶体和n侧侧壁粗糙化来增强GaN基发光二极管的光输出功率
机译:使用两步粗糙化方法增强独立式GaN基倒装芯片发光二极管的光提取