Raman spectroscopy of delta-doped GaAs layers and wires (Invited Paper)

摘要

Abstract: Raman spectroscopy is used to study the incorporation of Si in $delta@-doped GaAs layers via light scattering by local vibrational modes. This includes the analysis of Si monolayers embedded in GaAs. Raman scattering by excitations of the two- dimensional electron gas in $delta@-doped GaAs gives information on the subbands formed by the space charge induced potential well. In addition, the effect of additional lateral confinement on these subbands can be studied. !24