An integrated CMOS high power amplifier using power combining technique

摘要

A fully integrated power amplifier using the transformer type power combiner is presented. The power amplifier contains two transformers to lead to high output power with small chip size. The parallel combining transformer is realized with 1∶1 turn ratio. The transformers are incorporated into the design of power amplifier in a standard 0.18 µm CMOS technology. The power amplifier with built-in power combiner delivers 23.4 dBm of output power at 5.2 GHz with 3.3 V supply voltage.