EUV Mask Blank Readiness for 45nm HP 2009 Manufacturing

摘要

For successful commercialization of Extreme Ultraviolet (EUV) lithography essentially defect free mask blanks arerequired by 2009 for the 45nm Half Pitch (HP). SEMATECH has been engaging with the mask blank materials and toolsupplier community for several years and has evaluated rates of improvements against the needed alpha, beta, andproduction performance levels required to support EUV lithography introduction in 2009. Significant improvements inmany performance levels must be achieved with simultaneous specifications including defectivity, reflectivity,wavelength control, and buffer / absorber stack performances. Although some commercial capability exists today forlimited “alpha” level grade blank materials there are several orders of magnitude improvement needed in defectivitylevels coupled with defect size detection sensitivity. Although coordinated regional development programs for maskblanks have high effort levels rapid improvements are required to meet the 45nm HP timing in 2009 that is just 5 shortyears away. Traditional supplier rates of improvements may not be enough to meet the need by 2009. This paper willillustrate the general rate of improvements and further developments or innovative solutions that may be needed inseveral areas. The SEMATECH EUV mask blank development roadmap will be reviewed with SEMATECH’sperspective of commercial readiness predictions by 2009.