IN-SITU MEASUREMENT OF IRON IN P-TYPE SILICON WITH THE μW-PCD TECHNIQUE

摘要

The possibility to detect and measure iron in p-type silicon by means of lifetime measurements at high injection level is explored. A method based on the μw-PCD technique is presented, which exploits the same laser beam used for injecting the excess carriers to induce the FeB pair dissociation (in-situ dissociation). The lifetime measurement is repeated enough times on the same point to determine an appreciable FeB pair dissociation. The lifetime change during the repeated measurements is recorded and used to determine the iron concentration.