A NEW SUBSTRATE ENGINEERING TECHNIQUE TO REALIZE SILICON ON NOTHING (SON) STRUCTURE UTILIZING TRANSFORMATION OF SUB-MICRON TRENCHES TO EMPTY SPACE IN SILICON (ESS) BY SURFACE MIGRATION

摘要

A new innovative technique, Empty Space in Silicon (ESS), was successfully developed as a unique practical method to realize Silicon on Nothing (SON) structure. ESS is a self-organizing process to transform sub-micron trenches into desired shapes of empty spaces using surface migration phenomenon at high temperature. Fabricated SON layer had excellent crystal qualities for ULSI applications. Precise control of ESS process, such as shape, size, number and position of empty spaces, is possible by adopting proposed process design guidelines. ESS is a promising candidate, which can take the place of SOI. Moreover, ESS would have a potential to change the LSI structure and process drastically.