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首页> 外文期刊>電子情報通信学会技術研究報告. 集積回路. Integrated Circuits and Devices >A new substrate engineering technique to realize silicon on nothing (SON) structure utilizing surface migration
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A new substrate engineering technique to realize silicon on nothing (SON) structure utilizing surface migration

机译:利用表面迁移实现无硅(SON)结构的新基板工程技术

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摘要

A new innovative technique, Empty Space in Silicon (ESS), was successfully developed as a unique practical method to realize Silicon on Nothing (SON) structure. ESS is a self-organizing process to transform sub-micron trenches into desired shapes of empty spaces using surface migration phenomenon at high temperature. Fabricated SON layer had excellent crystal qualities for ULSI applications. ESS is a promising candidate, which can take the place of SOI. Moreover, ESS would have a potential to change the LSI structure and process drastically.
机译:作为一种独特的实用方法,成功实现了一种新的创新技术“硅中的空空间”(ESS),以实现无硅结构(SON)。 ESS是一种自组织过程,可以利用高温下的表面迁移现象将亚微米沟槽转换成所需的空旷形状。所制造的SON层具有适用于ULSI应用的优异晶体品质。 ESS是有希望的候选人,可以代替SOI。而且,ESS有潜力彻底改变LSI的结构和工艺。

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