HIGH PULL SPEED FOR FAST PULLED CRYSTAL IN CZ GROWTH

摘要

Recently, the demands for COP (Crystal Originated Particle) free wafer are continuously increased to satisfy the quality of the high density IC manufacturing. Fast pulled crystal is one of solutions. Due to the high pull rate of fasted pulled crystal, the crystal passed fast through the 1100℃-1070℃ COP forming range so only COPs of smaller sizes and high density can be formed. Furthermore, such small size voids near the wafer surface can be easily removed by post-growth wafer annealing. In this work, we could estimated that the range of V/G for the fast pull crystal growth was between 0.138 and 0.315. And we conformed it is approached 0.2 by experiments.