Laboratory of Semiconductor Materials, KTH, Electrum 229, 164 40 Kista, Sweden;
rnLaboratory of Semiconductor Materials, KTH, Electrum 229, 164 40 Kista, Sweden;
rnLaboratory of Semiconductor Materials, KTH, Electrum 229, 164 40 Kista, Sweden;
rnDepartment of Condensed Matter Physics, ETSII, University of Valladolid, 47011 Valladolid, Spain;
Department of Condensed Matter Physics, ETSII, University of Valladolid, 47011 Valladolid, Spain;
Laboratory of Thin Film Physics, Linkoping University, 581 83 Linkoping, Sweden;
rnLaboratory of Thin Film Physics, Linkoping University, 581 83 Linkoping, Sweden;
rnLaboratory of Semiconductor Materials, KTH, Electrum 229, 164 40 Kista, Sweden;
heteroepitaxy; InP; silicon photonics; defects; cathodoluminescence; photoluminescence; HVPE; ELOG;
机译:位错密度对异质外延磷化铟太阳能电池性能的影响
机译:使用具有脉冲宽度的连续波(CW)1070 nm光纤激光器对单晶硅,磷化铟和锑化铟中的微孔进行激光打孔
机译:使用具有脉冲宽度的连续波(CW)1070 nm光纤激光器对单晶硅,磷化铟和锑化铟中的微孔进行激光打孔
机译:硅上的异质氧化铟磷化硅
机译:金属有机气相外延在硅衬底上生长砷化铟镓磷化物/磷化铟1.3微米双异质结构激光器
机译:镓铟磷化物的表征及铝镓磷化物体系量子阱激光二极管的研究进展
机译:磷化镓铟磷化铟的表征及铝镓铟磷化铝系统量子孔激光二极管的进展