Atomic-level Analysis by Synchrotron Radiation and Characterization of 2 nm, 3 nm, and 5 nm-thick Hf0.5 Zr0.5 O2 Negative Capacitance FinFET

摘要

We report 2 nm, 3nm, and 5 nm-thick Hf_0.5Zr_0.5O₂ (HZO) thin film by atomic-level characterization of negative capacitance Fin field effect transistors (NC-FinFET). GI-XRD by synchrotron radiation results reveal that HZO thin film has a clear orthorhombic(o) crystalline phase even in 2 nm-thick HZO. The proposed NC-FinFETs show sub-60 mV/decade subthreshold slope (SS) and nearly hysteresis-free behaviors, compared to baseline HfO₂ FinFET.