Epitaxial Growth and Anisotropic Strain Relaxation of Ge1-xSnx Layers on Ge(110) Substrates

摘要

We have achieved the heteroepitaxial growth of a pseudomorphic Ge0.954Sn0.046 layer without Sn precipitation on a Ge(110) substrate. The strain in the Ge1−xSnx layer preferentially relaxed along [001] direction with annealing over 500C due to the anisotropic layout of glide planes on Ge(110) surface. These results suggest that an uniaxially compressive strained Ge1−xSnx structure can be realized with the anisotropic strain relaxation.