首页>
外国专利>
LIMITING STRAIN RELAXATION IN III-NITRIDE HETEROSTRUCTURES BY SUBSTRATE AND EPITAXIAL LAYER PATTERNING
LIMITING STRAIN RELAXATION IN III-NITRIDE HETEROSTRUCTURES BY SUBSTRATE AND EPITAXIAL LAYER PATTERNING
展开▼
机译:通过基质和表皮层图案化限制III类异质结构的应变松弛
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method of fabricating a substrate for a semipolar III-nitride device, comprising patterning and forming one or more mesas on a surface of a semipolar III-nitride substrate or epilayer, thereby forming a patterned surface of the semipolar III-nitride substrate or epilayer including each of the mesas with a dimension l along a direction of a threading dislocation glide, wherein the threading dislocation glide results from a III-nitride layer deposited heteroepitaxially and coherently on a non-patterned surface of the substrate or epilayer.
展开▼