Vapor Phase Self-Assembled Monolayers for CMOS BEOL Barrier Layers

摘要

As the Back-End-of-Line (BEOL) interconnects are scaling down to the nanometer regime with multiple levels of metallization, need for ultra-thin diffusion barrier layers arise. Self-assembled monolayer (SAM) technology is an ideal solution to satisfy the requirement of an ultra-thin barrier layer to avoid copper diffusion. However, wet chemical processes are preferably avoided in Complimentary Metal Oxide Semiconductor (CMOS) fabrication. Accordingly, a novel technique to form SAMs of zinc (Ⅱ) tetraphenyl hydroxy porphyrin (ZnTPPOH) from the vapor phase onto Inter-Layer Dielectric (ILD) materials is developed in the present work to fit into the industry process flow and be integratable in CMOS fabrication.