Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu,;
sublimation; PVT; initial stage; growth rate; crystal quality;
机译:6H-SiC块状单晶物理气相传输(PVT)生长过程中的位错演化和分布
机译:AlN单晶成核的控制:物理气相传输方法初期对晶体生长习惯的了解
机译:拉曼光谱研究氢辅助物理气相传输法生长的6H-SiC晶体的电学性质
机译:物理蒸气运输(PVT)生长的脱位进化与分布散装6H-SIC单晶
机译:直接蒸气传输生长的铌二硒化物单晶的超导性和低温性能
机译:物理蒸汽传输生长的散装铝合金单晶的X射线特征
机译:通过物理蒸汽输送(PVT)工艺在种子粘附中的微泡效应粘附6h-sic的晶体质量
机译:物理气相传输制备的4H和6H siC单晶(0001)面上的努氏硬度。