Comparison of parasitic components between LFET and VFET using 3D TCAD

摘要

In this work, we compare parasitic components between lateral nanowire-FET (LFET) and vertical nanowire-FET (VFET) based on ITRS 2015 using 3D Technology Computer-aided Design (TCAD). We compare the parasitic resistances and capacitances in accordance with channel thickness. Further, we analyzed the effects of parasitic components on device performance and proposed the direction of device scaling.