Evaluation of multilevel memory capability of ReRAM using Ta

摘要

ReRAM (Resistive Random Access Memory) has been drawing attention for its neural network applications with low-power and high-speed operation. The multilevel data storage capability is inherently needed to use the ReRAM as synaptic devices. In this study, two ReRAM devices with different electrode materials in which the operation mechanisms are thought to be different was fabricated and tested. It was clarified that the multilevel resistance characteristics were achieved in both devices.