BEOL compatible WS2 transistors fully fabricated in a 300 mm pilot line

摘要

-based transistors have been successfully integrated in a 300 mm pilot line using production tools. The 2D material was deposited using either area selective chemical vapor deposition (CVD) or Atomic Layer Deposition (ALD). No material transfer was required. The major integration challenges are the limited adhesion and the fragility of the few-monolayer 2D material. These issues are avoided by using a sacrificial Al