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Method of fabricating a single polysilicon bipolar transistor which is compatible with a method of fabricating CMOS transistors
Method of fabricating a single polysilicon bipolar transistor which is compatible with a method of fabricating CMOS transistors
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机译:与CMOS晶体管的制造方法兼容的单个多晶硅双极晶体管的制造方法
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摘要
An improved bipolar transistor of a BiCMOS integrated circuit is fabricated by utilizing a nitride layer over a thin silicon dioxide layer combined with a polysilicon layer. This bipolar structure has a self- aligned, P-type extrinsic base which results in lower base resistance and improved performance.
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