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Fabrication of nano-wedge resistive switching memory and analysis on its switching characteristics

机译：纳米楔形电阻开关存储器的制备及其开关特性分析

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摘要

Nano-wedge structured resistive switching memory is fabricated through modifying bottom electrode structure and the DC characteristics of devices are analyzed. Excellent data storage capability is proved through retention test by setting at high temperature over 10

机译：通过修改底部电极结构制备了纳米楔结构的电阻开关存储器，并分析了器件的直流特性。通过在10摄氏度以上的高温下进行保持测试，证明了出色的数据存储能力

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来源
《Silicon Nanoelectronics Workshop》|2017年|55-56|共2页
会议地点 Kyoto(JP)
作者
Dong Keun Lee; Sungjun Kim; Min-Hwi Kim; Suhyun Bang; Tae-Hyeon Kim; Byung-Gook Park;
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作者单位

Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering Seoul National University Seoul 08826 Republic of Korea;

Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and C;

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关键词
Switches; Electrodes; Phase change random access memory; Fabrication; Resistance; Metals; Reliability;

机译：开关；电极;相变随机存取存储器；制造;抵抗性;金属;可靠性;
入库时间 2022-08-26 14:34:53

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1. HfO_x-based nano-wedge structured resistive switching memory device operating at sub-μA current for neuromorphic computing application [J] . Lee Dong Keun, Kim Min-Hwi, Bang Suhyun, Semiconductor science and technology . 2020,第5期

机译：基于HFO_X的纳米纳米结构化电阻开关存储器在亚微型计算应用的子μA电流下操作
2. HfOx-based nano-wedge structured resistive switching memory device operating at sub-mu A current for neuromorphic computing application [J] . Lee Dong Keun, Kim Min-Hwi, Bang Suhyun, Trends in Ecology & Evolution . 2020,第5期

机译：基于HFOX的纳米楔形结构电阻切换存储器，在亚μ电流下进行神经形态计算应用
3. Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO2-based resistive switching memory for neuromorphic applications [J] . Khan Sobia Ali, Kim Sungjun RSC Advances . 2020,第52期

机译：在铝合金应用基于HFO2的电阻切换存储器中不同电阻切换特性和转换的演示的比较
4. Fabrication of Nano-Wedge Resistive Switching Memory and Analysis on Its Switching Characteristics [C] . Dong Keun Lee, Sungjun Kim, Min-Hwi Kim, IEEE Silicon Nanoelectronics Workshop . 2017

机译：纳米楔形电阻开关存储器的制造及其开关特性分析
5. Fabrication of Nano-Crossbar Resistive Switching Memory Based on the Copper-Tantalum Pentoxide-Platinum Device Structure [D] . Ochia, Adaku 2012

机译：基于五氧化二铜-铂金器件结构的纳米交叉电阻开关存储器的制作
6. Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory [O] . Meiyun Zhang, Shibing Long, Guoming Wang, 2014

机译：Cu / HfO2 / Pt电阻式开关存储器中复位开关的统计特性
7. Multilevel Switching Characteristics of Si3N4-Based Nano-Wedge Resistive Switching Memory and Array Simulation for In-Memory Computing Application [O] . Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, 2020

机译：基于SI3N4的纳米纳米电阻开关存储器的多电平切换特性，用于内存计算应用的阵列仿真

Fabrication of nano-wedge resistive switching memory and analysis on its switching characteristics

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