Fabrication of Nano-Wedge Resistive Switching Memory and Analysis on Its Switching Characteristics

摘要

Nano-wedge structured resistive switching memory is fabricated through modifying bottom electrode structure and the DC characteristics of devices are analyzed. Excellent data storage capability is proved through retention test by setting at high temperature over 10~4 seconds in both low and high resistance states (LRS and HRS). Endurance test is also performed to demonstrate outstanding characteristics of the resistive switching memory device.