Growth of SiC single crystal from Si-C-(Co, Fe) ternary solution

摘要

We carried out the growth of single crystalline silicon carbide (SiC) from Si-C-X (X= Co, Fe) ternary solutions. These ternary solutions are expected to show large carbon solubility compared with Si solvent (self-flux) by means of CALPHAD (CALculation of PHAse Diagrams) method. We investigated the growth rate and the polytype of the grown crystal from the ternary solutions. Then we found that the growth rate from the ternary solutions is much larger than that from the self-flux. The growth rate from Si-C-Co (Si-C-Fe) system was about 6μm/hr (12μm/hr) while that from the self-flux was only 2μm/hr. The grown crystal from the ternary solutions is classified into 6H that takes over the seed polytype.